Power LDMOS transistor

750 W LDMOS power transistor in SOT539 push pull package for accelerator applications at a frequency of 1.3 GHz.

Features and benefits

  • High efficiency
  • Excellent ruggedness
  • Excellent thermal stability
  • Easy power control
  • Integrated dual sided ESD protection enables excellent off-state isolation
  • High flexibility with respect to pulse formats
  • Internally matched for ease of use
  • For RoHS compliance see the product details on the Ampleon website


  • Accelerator applications at the frequency of 1.3 GHz


Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1300 MHz
PL(1dB) nominal output power at 1 dB gain compression 750 W
Test signal: Pulsed RF
VDS drain-source voltage 1.3 GHz [0] 50 V
Gp power gain 1.3 GHz [0] 19 dB
ηD drain efficiency 1.3 GHz [0] 62 %
PL output power 1.3 GHz [0] 750 W
Test signal: CW
VDS drain-source voltage 1.3 GHz [0] 50 V
Gp power gain 1.3 GHz [0] 17 dB
ηD drain efficiency 1.3 GHz [0] 62.5 %
PL output power 1.3 GHz [0] 700 W

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF13H9L750P SOT539A
sot539a_po Bulk Pack Active Standard Marking BLF13H9L750PU
(9349 601 76112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF13H9L750P 9349 601 76112 BLF13H9L750PU RFMW Buy Request samples
DigiKey Buy

Design support

Title Type Date
PCB Design BLF13H9L(S)750P (Data sheet) Design support 2018-09-20
BLF13H9LS750P ADS-2016 Simulation model 2018-09-20