Broadband RF power GaN HEMT

The CLF3H0060-10 and CLF3H0060S-10 are 10 W general purpose, unmatched broadband GaN-SiC HEMT transistors that are usable in the frequency range from DC to 6.0 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications.

Features and benefits

  • 10 W general purpose broadband RF power GaN HEMT
  • High efficiency
  • Low thermal resistance
  • Excellent ruggedness
  • Designed for broadband operation in the frequency range from DC to 6.0 GHz
  • 50 V capable 10 W GaN-SiC HEMT in an unmatched configuration in an air-cavity ceramic package
  • Offers agile performance in an easy to apply package
  • For RoHS compliance see the product details on the Ampleon website 
  • Large signal models in ADS and MWO are available on the Ampleon website


  • Broadband tactical communication
  • Broadband countermeasures
  • Instrumentation amplifiers
  • Radar for UHF, L- and S-band


Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 0 6000 MHz
PL(1dB) nominal output power at 1 dB gain compression 10 W
Test signal: Pulsed CW
VDS drain-source voltage PL = 10 W [0] 50 V
Gp power gain PL = 10 W [0] 18.8 20.1 dB
RLin input return loss PL = 10 W [0] -15 dB
ηD drain efficiency PL = 10 W [0] 57 63 %

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
CLF3H0060-10 CDFM2
sot1227a_po Tray; 20-fold; non-dry pack Active Standard Marking CLF3H0060-10U
(9349 606 01112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source