HF / VHF power LDMOS transistor

A 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 700 MHz band.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (10 MHz to 700 MHz)
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Industrial, scientific and medical applications
  • Broadcast transmitter applications

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Design tool

RF Power Lifetime Calculator

Transistor:
BLF978P

HF / VHF power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 700 MHz
PL(1dB) nominal output power at 1 dB gain compression 1200 W
Test signal: CW pulsed
VDS drain-source voltage PL = 1200 W [0] 50 V
Gp power gain PL = 1200 W [0] 23 24.5 dB
ηD drain efficiency PL = 1200 W [0] 78 80.6 %
RLin input return loss PL = 1200 W [0] -20 -12 dB

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF978P SOT539A
(SOT539A)
sot539a_po Bulk Pack Active Standard Marking BLF978PU
(9349 602 93112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLF978P BLF978PU BLF978P Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF978P 9349 602 93112 BLF978PU RFMW Buy Request samples
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