Broadband power LDMOS transistor

A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

Features and benefits

  • Integrated ESD protection
  • Excellent ruggedness
  • High power gain
  • High efficiency
  • Excellent reliability
  • Easy power control
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • Communication transmitter applications in the HF to 1500 MHz frequency range
  • Industrial applications in the HF to 1500 MHz frequency range

Downloads

Datasheet
All application notes
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLF647PS

Broadband power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 1500 MHz
PL(1dB) nominal output power at 1 dB gain compression 200 W
Test signal: Pulsed RF
Gp power gain VDS = 32 V 17.5 dB
ηD drain efficiency VDS = 32 V; f = 1300 MHz; IDq = 0.1 A 70 %
PL(M) peak output power 200 W

Package / Packing

Type number Package type,
(Package outline)
Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF647PS ACC-780
(SOT1121B)
sot1121b_po Reel 13" Q1/T1 Active Standard Marking BLF647PSJ
(934066857118)
Bulk Pack Active Standard Marking BLF647PS,112
(934066857112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source [0]

Ordering & availability

Type number 12NC OPN Distributor Buy online Samples
BLF647PS 934066857118 BLF647PSJ Mouser Buy Not available
RFMW Buy
DigiKey Buy
BLF647PS 934066857112 BLF647PS,112 Mouser Buy Request samples
RFMW Buy
DigiKey Buy