This product has been discontinued. Click here for discontinuation information.

VHF push-pull power MOS transistor

Dual push-pull silicon N-channel enhancement mode vertical D-MOS transistor, designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange package, with two ceramic caps. The mounting flange provides the common source connection for the transistors.

Features and benefits

  • High power gain
  • Easy power control
  • Good thermal stability
  • Gold metallization ensures excellent reliability

Applications

  • Large signal amplifier applications in the VHF frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 230 MHz
PL(1dB) nominal output power at 1 dB gain compression 300 W
Test signal: CW
Gp power gain PL = 300 W; VDS = 28 V; f = 225 MHz 10 11.5 dB
ηD drain efficiency PL = 300 W; VDS = 28 V; f = 225 MHz; IDq = 250 mA 55 65 %
PL output power 300 W

Package / Packing

All type numbers in the table below are discontinued.

Type number Package type,
(Package outline)
Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF248 SOT262
(SOT262A1)
sot262a1_po Bulk Pack Withdrawn Standard Marking BLF248,112
(934006630112)

Discontinuation information

Type number 12NC OPN LTB date LTD date Replacement DN notice Product status Comments
BLF248 934006630112 BLF248,112 2014-03-31 2014-06-30 201306022DN Withdrawn

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source

Ordering & availability

Type number 12NC OPN Distributor Buy online Samples
BLF248 934006630112 BLF248,112 RFMW Buy Not available
DigiKey Buy

Design support

Title Type Date
BLF248 14 V 250 mA S-parameter data S-parameter 2012-06-08
BLF248 28 V 250 mA S-parameter data S-parameter 2012-06-08