This product has been discontinued. Click here for discontinuation information.

VHF power MOS transistor

Silicon N-channel enhancement mode vertical D-MOS transistor designed for large signal amplifier applications in the VHF frequency range. The transistor is encapsulated in a 4-lead SOT123A flange package, with a ceramic cap. All leads are isolated from the flange. Matched gate-source voltage (VGS) groups are available on request.

Features and benefits

  • High power gain
  • Low noise figure
  • Easy power control
  • Good thermal stability
  • Withstands full load mismatch

Applications

  • Large signal amplifier applications in the VHF frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 25 175 MHz
PL(1dB) nominal output power at 1 dB gain compression 30 W
Test signal: CW
Gp power gain PL = 30 W; VDS = 28 V 13 15.5 dB
ηD drain efficiency PL = 30 W; VDS = 28 V; f = 175 MHz; IDq = 50 mA 50 67 %
PL output power 30 W

Package / Packing

All type numbers in the table below are discontinued.

Type number Package type,
(Package outline)
Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF245 SOT123
(SOT123A)
sot123a_po Bulk Pack Withdrawn Standard Marking BLF245,112
(933817060112)

Discontinuation information

Type number 12NC OPN LTB date LTD date Replacement DN notice Product status Comments
BLF245 933817060112 BLF245,112 2014-03-31 2014-06-30 201306022DN Withdrawn

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 S source
3 G gate
4 S source

Ordering & availability

Type number 12NC OPN Distributor Buy online Samples
BLF245 933817060112 BLF245,112 RFMW Buy Not available
DigiKey Buy

Design support