Power LDMOS transistor

200 W LDMOS-based power transistor suitable for use in industrial, scientific and medical applications and communication applications at frequencies from 1975 MHz to 2025 MHz.

The BLF20M10LS200P is designed for high-power CW applications and is assembled in a high performance ceramic package.

Features and benefits

  • High efficiency
  • Excellent ruggedness
  • Integrated ESD protection
  • Internally input and output matched
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Industrial, scientific and medical applications
    • Plasma generators
  • Communications
    • Non cellular communications

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1975 2025 MHz
PL(1dB) nominal output power at 1 dB gain compression 200 W
Test signal: CW
VDS drain-source voltage f = 2000 MHz [0] 32 V
PL(AV) average output power f = 2000 MHz [0] 200 W
Gp power gain f = 2000 MHz [0] 17.3 dB
ηD drain efficiency f = 2000 MHz [0] 69 %

Package / Packing

Type number Package type,
(Package outline)
Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF20M10LS200P ACC-780
(SOT1121B)
sot1121b_po Tray; 20-fold; non-dry pack Active Standard Marking BLF20M10LS200PU
(9349 610 63112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
4 G1 gate1
5 G2 gate2
5 S source [1]

Recommended line-up

No documentation available.