This product has been discontinued. Click here for discontinuation information.
The replacement is: BLF647P

VHF power MOS transistor

Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the “General” section of the handbook for further information.

Features and benefits

  • High power gain
  • Low intermodulation distortion
  • Easy power control
  • Good thermal stability
  • Withstands full load mismatch

Applications

  • Industrial and military applications in the HF/VHF frequency range.

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 175 MHz
PL(1dB) nominal output power at 1 dB gain compression 150 W
Test signal: CW
Gp power gain VDS = 28 V 14 dB
ηD drain efficiency VDS = 28 V; f = 108 MHz; IDq = 1 A 70 %
PL output power 150 W

Package / Packing

All type numbers in the table below are discontinued.

Type number Package type,
(Package outline)
Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF147 SOT121
(SOT121B)
sot121b_po Bulk Pack Withdrawn Standard Marking BLF147,112
(933930000112)

Discontinuation information

Type number 12NC OPN LTB date LTD date Replacement DN notice Product status Comments
BLF147 933930000112 BLF147,112 2014-03-31 2014-06-30 BLF647P 201306022DN Withdrawn

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 S source
3 G gate
4 S source

Ordering & availability

Type number 12NC OPN Distributor Buy online Samples
BLF147 933930000112 BLF147,112 RFMW Buy Not available
DigiKey Buy

Design support

Title Type Date
BLF147 28 V 1000 mA S-parameter data S-parameter 2012-06-08
BLF147 14 V 1000 mA S-parameter data S-parameter 2012-06-08