UHF power LDMOS transistor

A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrialapplications. The transistor can deliver 200 W in broadband applications from HF to 860 MHz. Theexcellent ruggedness and broadband performance of this device makes it ideal for digitaltransmitter applications.

Features and benefits

  • Integrated ESD protection
  • Excellent ruggedness
  • High power gain
  • High efficiency
  • Excellent reliability
  • Easy power control
  • Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)


  • Transmitter applications in the HF to 860 MHz frequency range
  • Industrial applications in the HF to 860 MHz frequency range
  • Broadcast transmitters


All documentation

All documents

Design tool

RF Power Lifetime Calculator


UHF power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 860 MHz
PL(1dB) nominal output power at 1 dB gain compression 200 W
Test signal: CW
Gp power gain VDS = 50 V 19.6 20.6 dB
ηD drain efficiency VDS = 50 V; f = 705 MHz; IDq = 100 mA 60 63 %
PL(AV) average output power f = 705 MHz; tp = 100 µs; δ = 0.1   196 W

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF882 SOT502A
sot502a_po Bulk Pack Active Standard Marking BLF882U
(9340 690 16112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLF882 BLF882U BLF882 Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF882 9340 690 16112 BLF882U DigiKey Buy Request samples

Design support

Title Type Date
PCB Design R_10032 Design support 2012-08-16
PCB Design BLF882(S) (Data sheet) Design support 2015-06-01