Power LDMOS transistor

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (HF to 128 MHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • Industrial, scientific and medical applications
  • Broadcast transmitter applications

Downloads

Datasheet
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All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLF178XR

Power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 128 MHz
PL(1dB) nominal output power at 1 dB gain compression 1400 W
Test signal: Pulsed RF
Gp power gain VDS = 50 V; PL = 1400 W [0] 27 28 dB
RLin input return loss VDS = 50 V; IDq = 40 mA; PL = 1400 W [0] -15 -11 dB
ηD drain efficiency VDS = 50 V; f = 108 MHz; IDq = 40 mA; PL = 1400 W [0] 68 72 %
PL output power [0] 1400 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF178XR SOT539A
(SOT539A)
sot539a_po Bulk Pack Active Standard Marking BLF178XR,112
(9340 662 85112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLF178XR BLF178XR,112 BLF178XR Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF178XR 9340 662 85112 BLF178XR,112 DigiKey Buy Request samples
RFMW Buy

Documentation

Title Type Date
Power LDMOS transistor Data sheet 2015-12-07

Design support