Power LDMOS transistor

A 250 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

Features and benefits

  • Easy power control
  • Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (HF to 600 MHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • Industrial, scientific and medical applications
  • Broadcast transmitter applications

Downloads

Datasheet
All application notes
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLP05H6250XRG

Power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 600 MHz
PL(1dB) nominal output power at 1 dB gain compression 250 W
Test signal: Pulsed RF
Gp power gain PL = 250 W [0] 26.2 27 dB
RLin input return loss PL = 250 W [0] -12 -10 dB
ηD drain efficiency PL = 250 W [0] 72 75 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLP05H6250XRG HSOP4
(SOT1224-2)
sot1224-2_po.pdf Reel 13" Q1/T1 in Drypack Active Standard Marking BLP05H6250XRGY
(9349 600 25518)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 G2 gate 2
2 G1 gate1
3 D1 drain1
4 D2 drain2
5 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLP05H6250XRG 9349 600 25518 BLP05H6250XRGY RFMW Buy Not available
DigiKey Buy

Design support

Title Type Date
PCB Design BLP05H6250XR(G) (Data sheet) Design support 2018-08-20