Broadband power LDMOS transistor

A 70 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1300 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

Features and benefits

  • Integrated ESD protection
  • Excellent ruggedness
  • High power gain
  • High efficiency
  • Excellent reliability
  • Easy power control
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)


  • Communication transmitter applications in the HF to 1300 MHz frequency range
  • Industrial applications in the HF to 1300 MHz frequency range


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Broadband power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 1300 MHz
PL(1dB) nominal output power at 1 dB gain compression 70 W
Test signal: CW pulsed, class-AB
Gp power gain PL = 100 W; VDS = 32 V [0] 22.8 23.5 dB
RLin input return loss PL = 100 W; VDS = 32 V; IDq = 200 mA [0] -15 -7 dBc
ηD drain efficiency PL = 100 W; VDS = 32 V; f = 860 MHz; IDq = 200 mA [0] 62 66 %

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
sot1228a_po Bulk Pack Active Standard Marking BLF644PU
(9340 676 35112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLF644P BLF644PU BLF644P Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF644P 9340 676 35112 BLF644PU RFMW Buy Request samples
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