Power LDMOS transistor

A 500 W LDMOS power transistor for avionics applications at frequencies from 900 MHz to 930 MHz.

The BLA8H0910L-500 and BLA8H0910LS-500 are designed for high-power CW applications and are assembled in high performance ceramic packages.

Features and benefits

  • High efficiency
  • Easy power control
  • Excellent ruggedness
  • Integrated ESD protection
  • Designed for broadband operation (900 MHz to 930 MHz)
  • Internally input matched
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)


  • Avionics applications in the 900 MHz to 930 MHz frequency range


Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 900 930 MHz
PL(1dB) nominal output power at 1 dB gain compression 500 W
Test signal: CW pulsed
VDS drain-source voltage 915 MHz Class-AB 50 V
Gp power gain 915 MHz Class-AB 19.5 dB
ηD drain efficiency 915 MHz Class-AB 62.5 %
PL average output power 915 MHz Class-AB 500 W

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLA8H0910LS-500 SOT502B
sot502b_po Bulk Pack Active Standard Marking BLA8H0910LS-500U
(9349 600 62112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLA8H0910LS-500 BLA8H0910LS-500U BLA8H0910LS-500 Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLA8H0910LS-500 9349 600 62112 BLA8H0910LS-500U RFMW Buy Request samples
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Design support

Title Type Date
BLA8H0910L-500 ADS-2016 Simulation model 2017-02-06
PCB Design BLA8H0910L(S)-500 (Data sheet) Design support 2018-04-23