CLF3H0060-10
Download datasheetBroadband RF power GaN HEMT
The CLF3H0060-10 and CLF3H0060S-10 are 10 W general purpose, unmatched broadband GaN-SiC HEMT transistors that are usable in the frequency range from DC to 6.0 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications.
Features and benefits
- 10 W general purpose broadband RF power GaN HEMT
- High efficiency
- Low thermal resistance
- Excellent ruggedness
- Designed for broadband operation in the frequency range from DC to 6.0 GHz
- 50 V capable 10 W GaN-SiC HEMT in an unmatched configuration in an air-cavity ceramic package
- Offers agile performance in an easy to apply package
- For RoHS compliance see the product details on the Ampleon website
- Large signal models in ADS and MWO are available on the Ampleon website
Applications
- Broadband tactical communication
- Broadband countermeasures
- Instrumentation amplifiers
- Radar for UHF, L- and S-band
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 0 | 6000 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 10 | W | |||
| Test signal: Pulsed CW | ||||||
| VDS | drain-source voltage | PL = 10 W [0] | 50 | V | ||
| Gp | power gain | PL = 10 W [0] | 18.8 | 20.1 | dB | |
| RLin | input return loss | PL = 10 W [0] | -15 | dB | ||
| ηD | drain efficiency | PL = 10 W [0] | 57 | 63 | % | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| CLF3H0060-10 | SOT1227 (SOT1227A) |
sot1227a_po | Tray; 20-fold; non-dry pack | Discontinued | Standard Marking |
CLF3H0060-10U (9349 606 01112) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D | drain |
|
|
| 2 | G | gate | ||
| 3 | S | source [1] |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Broadband RF power GaN HEMT | Data sheet | 2023-07-17 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| Thermal characteristics of GaN power transistors | Application note | 2024-09-01 | |
| RF power solutions for ISM, broadcast, navigation and safety radio applications | Brochure | 2025-06-03 | |
| RF power application reports for ISM, broadcast, navigation and safety radio applications | Brochure | 2025-06-12 | |
| Packages for RF power transistors | Leaflet | 2025-06-20 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) CLF3H0060(S)-10 (Data sheet) | Design support | 2023-07-26 | |
| CLF3H0060(S)-10 Model for ADS 2019 (Keysight Advanced Design System) | Simulation model | 2023-07-17 | |
| Model Library Manual for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Simulation Example for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 |