Broadband RF power GaN HEMT

The CLF3H0035-100 and CLF3H0035S-100 are 100 W general purpose, unmatched broadband GaN HEMT transistors that are usable in the frequency range from DC to 3.5 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications.

Features and benefits

  • 100 W general purpose broadband RF power GaN HEMT
  • High efficiency
  • Low thermal resistance
  • Excellent ruggedness
  • Designed for broadband operation in the frequency range from DC to 3.5 GHz
  • For RoHS compliance see the product details on the Ampleon website

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 0 3500 MHz
PL(1dB) nominal output power at 1 dB gain compression 100 W
Test signal: Pulsed CW
VDS drain-source voltage [0] 50 V
PL output power PL = PL(3dB) [0] 118 W
Gp power gain PL = 100 W [0] 14 15 dB
ηD drain efficiency PL = 100 W [0] 52 57 %
RLin input return loss PL = 100 W [0] -12 -8 dB

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
CLF3H0035-100 SOT467C
(SOT467C)
sot467c_po Tray; 20-fold; non-dry pack Active Standard Marking CLF3H0035-100U
(9349 602 87112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
CLF3H0035-100 9349 602 87112 CLF3H0035-100U DigiKey Buy Request samples
RFMW Buy

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
CLF3H0035-100 9349 602 87112 CLF3H0035-100U DigiKey Buy Request samples
RFMW Buy

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