C4H22W500A
Request datasheetC4H22W500A
Request datasheetPower GaN transistor
500 W GaN packaged asymmetric Doherty power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.
Features and benefits
- Excellent digital pre-distortion capability
- High efficiency
- Designed for broadband operation
- Lower output capacitance for improved performance in Doherty applications
- Internally matched for ease of use
Applications
- RF power amplifier for base stations and multi carrier applications in the 2110 MHz to 2170 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 2110 | 2170 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 500 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| VDS | drain-source voltage | f = 2110 MHz to 2170 MHz [0] [1] | 50 | V | ||
| Gp | power gain | f = 2110 MHz to 2170 MHz [0] [1] | 16.3 | dB | ||
| ηD | drain efficiency | f = 2110 MHz to 2170 MHz [0] [1] | 59.8 | % | ||
| PL(AV) | average output power | f = 2110 MHz to 2170 MHz [0] [1] | 49.2 | dBm | ||
| IDq | quiescent drain current | f = 2110 MHz to 2170 MHz [0] [1] | 450 | mA | ||
| ACPR | adjacent channel power ratio | f = 2110 MHz to 2170 MHz [0] [1] | -31.2 | dBc | ||
Package / Packing
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| C4H22W500A | ACP-780 (SOT1273-1) |
sot1273-1_po | Tray; 20-fold; dry pack | Active | Standard Marking |
C4H22W500AZ (934960484517) |
| TR13; 100-fold; 44 mm; dry pack | Active | Standard Marking |
C4H22W500AY (934960484518) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 |
|
|
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| Thermal characteristics of GaN power transistors | Application note | 2024-09-01 | |
| Packages for RF power transistors | Leaflet | 2026-04-17 | |
| RF power solutions for Wireless Infrastructure | Brochure | 2026-06-15 |
No documentation available.