BLF246B
Download datasheetVHF push-pull power MOS transistor
Dual silicon N-channel enhancement mode vertical D-MOS push-pull transistor encapsulated in an 8-lead SOT161A balanced flange package with a ceramic cap. All leads are isolated from the flange.
Features and benefits
- High power gain
- Easy power control
- Good thermal stability
- Gold metallization ensures excellent reliability
Applications
- Large signal applications in the VHF frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 25 | 175 | MHz | ||
| PL(1dB) | nominal output power at 1 dB gain compression | 60 | W | |||
| Test signal: CW | ||||||
| Gp | power gain | PL = 60 W; VDS = 28 V | 14 | 19 | dB | |
| ηD | drain efficiency | PL = 60 W; VDS = 28 V; f = 175 MHz; IDq = 50 mA | 55 | 65 | % | |
| PL | output power | 60 | W | |||
Package / Packing
All type numbers in the table below are discontinued.
| Type number |
Package type, (Package outline) |
Outline version | Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|
| BLF246B | SOT161 (SOT161A) |
sot161a_po | Bulk Pack | Withdrawn | Standard Marking |
BLF246B,112 (9340 010 90112) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | S | source |
|
|
| 2 | S | source | ||
| 3 | D1 | drain1 | ||
| 4 | G1 | gate1 | ||
| 5 | D2 | drain2 | ||
| 6 | G2 | gate2 | ||
| 7 | S | source | ||
| 8 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| VHF push-pull power MOS transistor | Data sheet | 2015-11-30 | |
| Mounting and soldering of RF transistors in air cavity packages | Application note | 2025-02-03 | |
| RF power solutions for ISM, broadcast, navigation and safety radio applications | Brochure | 2025-06-03 | |
| RF power application reports for ISM, broadcast, navigation and safety radio applications | Brochure | 2025-06-12 | |
| Packages for RF power transistors | Leaflet | 2025-06-20 |
No documentation available.