Power LDMOS transistor

Based on Advanced Rugged Technology (ART), this 500 W LDMOS RF transistor has been designed to cover a wide range of applications for ISM, broadcast and communications. The unmatched transistor has a frequency range of 1 MHz to 250 MHz.

Features and benefits

  • Mirrored pin-out versions for easy flexible usage in a push-pull configuration
  • High breakdown voltage enables class E operation up to VDS = 53 V
  • Qualified up to a maximum of VDS = 65 V
  • Characterized from 30 V to 65 V to support a wide range of applications
  • Integrated dual sided ESD protection enables class C operation and complete switch-off of the transistor
  • Excellent ruggedness with no device degradation
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • Industrial, scientific and medical applications
    • Plasma generators
    • MRI systems
    • Particle accelerators
    • Defrosting
    • Industrial heating
  • Broadcast
    • FM radio
    • VHF TV
  • Non cellular communications
  • Switch mode power supplies

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 250 MHz
PL(3dB) nominal output power at 3 dB gain compression 330 W
Test signal: CW
VDS drain-source voltage f = 41 MHz 50 V
PL output power f = 41 MHz 330 W
Gp power gain f = 41 MHz 27 dB
ηD drain efficiency f = 41 MHz 80 %

Package / Packing

Type number Package type,
(Package outline)
Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
ART500PE1 TO-247
(TO-247-3F-1)
TO-247-3F-1_po 10Tube; 300-fold; dry pack Active Standard Marking ART500PE1QZ
(934961120125)

Pinning info

Pin Description Simplified outline Graphic symbol
1 gate
2 source [1]
3 drain

Recommended line-up

Design support