Power LDMOS transistor

A 160 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

Features and benefits

  • Integrated ESD protection
  • Excellent ruggedness
  • High power gain
  • High efficiency
  • Excellent reliability
  • Easy power control
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • Communication transmitter applications in the HF to 1500 MHz frequency range
  • Industrial applications in the HF to 1500 MHz frequency range
  • Single product Doherty applications

Downloads

Datasheet
All application notes
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Design tool

RF Power Lifetime Calculator

Transistor:
BLP15M7160P

Power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 1500 MHz
PL(1dB) nominal output power at 1 dB gain compression 160 W
Test signal: CW
Gp power gain VDS = 28 V; PL(M) = 160 W 16.5 19.4 dB
ηD drain efficiency VDS = 28 V; IDq = 100 mA; PL(M) = 160 W 57.5 59.7 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLP15M7160P HSOP4F
(SOT1223-2)
sot1223-2_po Reel 13" Q1/T1 in Drypack Active Standard Marking BLP15M7160PY
(9340 676 37518)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 G1 gate1
2 G2 gate2
3 D2 drain2
4 D1 drain1
5 SOURCE source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLP15M7160P 9340 676 37518 BLP15M7160PY DigiKey Buy Request samples

Design support