Power LDMOS transistor

A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 128 MHz band.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (HF to 128 MHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances


  • Industrial, scientific and medical applications
  • Broadcast transmitter applications


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Power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 128 MHz
PL(1dB) nominal output power at 1 dB gain compression 600 W
Test signal: Pulsed RF
Gp power gain PL = 600 W; VDS = 50 V 29 dB
ηD drain efficiency PL = 600 W; VDS = 50 V; f = 108 MHz; IDq = 100 mA 73 %

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
sot1214a_po Bulk Pack Active Standard Marking BLF174XR,112
(9340 670 84112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLF174XR BLF174XR,112 BLF174XR Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF174XR 9340 670 84112 BLF174XR,112 RFMW Buy Request samples
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