LDMOS S-band radar power transistor

400 W LDMOS power transistor for S-band radar applications in the frequency range from 3.1 GHz to 3.5 GHz

Features and benefits

  • High efficiency
  • Excellent ruggedness
  • Designed for S-band operation
  • Excellent thermal stability
  • Easy power control
  • Integrated dual sided ESD protection enables excellent off-state isolation
  • High flexibility with respect to pulse formats
  • Internally matched for ease of use
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • S-band radar applications in the frequent range 3.1 GHz to 3.5 GHz

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 3100 3500 MHz
PL(1dB) nominal output power at 1 dB gain compression 400 W
Test signal: Pulsed RF
VDS drain-source voltage 3.1-3.5 GHz [0] 32 V
Gp power gain 3.1-3.5 GHz [0] 12 dB
ηD drain efficiency 3.1-3.5 GHz [0] 43 %
PL output power 3.1-3.5 GHz [0] 425 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLS9G3135LS-400 SOT502B
(SOT502B)
sot502b_po Bulk Pack Active Standard Marking BLS9G3135LS-400U
(9340 692 98112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLS9G3135LS-400 9340 692 98112 BLS9G3135LS-400U RFMW Buy Request samples
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Design support