LDMOS S-band radar power transistor

350 W LDMOS power transistor for S-band applications in the frequency range from 2.7 GHz to 2.9 GHz.

Features and benefits

  • High efficiency
  • Excellent ruggedness
  • Designed for S-band operations
  • Excellent thermal stability
  • Easy power control
  • Integrated dual sided ESD protection enables excellent off-state isolation
  • High flexibility with respect to pulse formats
  • Internally matched for ease of use
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • S-band radar applications in the frequency range from 2.7 GHz to 2.9 GHz

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 2700 2900 MHz
PL(1dB) nominal output power at 1 dB gain compression 350 W
Test signal: Pulsed RF
VDS drain-source voltage 2.7-2.9 GHz [0] 28 V
Gp power gain 2.7-2.9 GHz [0] 14 dB
ηD drain efficiency 2.7-2.9 GHz [0] 50 %
PL output power 2.7-2.9 GHz [0] 320 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLS9G2729L-350 SOT502A
(SOT502A)
sot502a_po Bulk Pack Active Standard Marking BLS9G2729L-350U
(9349 600 82112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLS9G2729L-350 9349 600 82112 BLS9G2729L-350U RFMW Buy Request samples
DigiKey Buy

Design support

Title Type Date
BLS9G2729L-350 ADS-2017 Simulation model 2017-04-11
PCB Design BLS9G2729L(S)-350 (Data sheet) Design support 2018-08-19