Broadband RF power GaN HEMT

The CLF3H0060-30 and CLF3H0060S-30 are 30 W general purpose, unmatched broadband GaN-SiC HEMT transistors that are usable in the frequency range from DC to 6.0 GHz. The device utilizes a thermally enhanced package which supports both CW and pulsed applications.

Features and benefits

  • 30 W general purpose broadband RF power GaN HEMT
  • High efficiency
  • Low thermal resistance
  • Excellent ruggedness
  • Designed for broadband operation in the frequency range from DC to 6.0 GHz
  • For RoHS compliance see the product details on the Ampleon website 
  • Large signal models in ADS and MWO are available on the Ampleon website

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 0 6000 MHz
PL(1dB) nominal output power at 1 dB gain compression 30 W
Test signal: Pulsed CW
VDS drain-source voltage [0] 50 V
Gp power gain PL = 30 W [0] 15.5 17 dB
RLin input return loss PL = 30 W [0] -15 dB
ηD drain efficiency PL = 30 W [0] 57 61.5 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
CLF3H0060-30 CDFM2
(SOT1227A)
sot1227a_po Tray; 20-fold; non-dry pack Active Standard Marking CLF3H0060-30U
(9349 603 36112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
CLF3H0060-30 9349 603 36112 CLF3H0060-30U RFMW Buy Request samples
DigiKey Buy

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
CLF3H0060-30 9349 603 36112 CLF3H0060-30U RFMW Buy Request samples
DigiKey Buy