This product has been discontinued. Click here for discontinuation information.

VHF power MOS transistor

Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 6-lead, SOT119A flange package, with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the General Section of the associated Data Handbook for further information.

Features and benefits

  • High power gain
  • Easy power control
  • Good thermal stability
  • Gold metallization ensures excellent reliability

Applications

  • Linear amplifier applications in television transmitters and transposers

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 170 230 MHz
PL(1dB) nominal output power at 1 dB gain compression 30 W
Test signal: CW
Gp power gain VDS = 28 V; Th = 25 °C 15 16.5 dB
PL output power Th = 25 °C 22 30 W
IMD3 third-order intermodulation distortion VDS = 28 V; Th = 25 °C -55 -52 dB

Package / Packing

All type numbers in the table below are discontinued.

Type number Package type,
(Package outline)
Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF346 SOT119
(SOT119A)
sot119a_po Bulk Pack Withdrawn Standard Marking BLF346,112
(934006640112)

Discontinuation information

Type number 12NC OPN LTB date LTD date Replacement DN notice Product status Comments
BLF346 934006640112 BLF346,112 2013-06-30 2013-12-31 201212003DN Withdrawn

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 S source
2 S source
3 G gate
4 D drain
5 S source
6 S source

Ordering & availability

Type number 12NC OPN Distributor Buy online Samples
BLF346 934006640112 BLF346,112 RFMW Buy Not available
DigiKey Buy

Design support

Title Type Date
BLF346 28 V 3 A S-parameter data S-parameter 2012-06-08
BLF346 14 V 3 A S-parameter data S-parameter 2012-06-08