Directly go to the RF Power Lifetime Calculator

The RF Power Lifetime Calculator has been designed to assist our customers in estimating the LDMOS device reliability in years. The returned results are represented by MTF (Median-Time-To-Failure, the time that 50% of the population has failed) as a function of Junction Temperature (TJ) of the device, assuming electromigration as the wear-out failure mechanism. For two-stage MMICs the lifetime is determined by (and therefore only calculated for) the second/final stage. The tool covers four generations of RF power transistors (Gen6, Gen7, Gen8 and Gen9), available in the current product portfolio of Ampleon.

For GaN , the returned results are represented by MTF (Median-Time-To-Failure, the time that 50% of the population has failed) as a function of Surface  Temperature (Ts) of the device, assuming Schottky and Ohmic degradation as the wear-out failure mechanisms specific for GaN HEMT devices.

Key features

  • Wide LDMOS Product Selection: you can quickly select RF Power transistors of Gen6, Gen7, Gen8 and Gen9 LDMOS and GaN, available in the current product portfolio of Ampleon.
  • Operating Conditions Input: You can either specify the desired input values for Case Temperature, Drain Voltage, Drain Current, Input and Output power, or use the default values defined per product datasheet.
  • Validity Check: to obtain meaningful results, input values are restricted according to test and physical capabilities of our products.
  • Lifetime Calculation: the key results are represented by Median-Time-To-Failure (MTF, 50%) as a function of Junction Temperature (Tj). Drain Efficiency (ηd) and Power-added Efficiency (ηPAE) are calculated for the overall check.