Power LDMOS transistor

A 600 W LDMOS power transistor for industrial applications at frequency of 915 MHz.

The BLF0910H9LS600 is designed for high-power CW applications and is assembled in a high performance ceramic package.

Features and benefits

  • High efficiency
  • Easy power control
  • Excellent ruggedness
  • Integrated ESD protection
  •  Designed for broadband operation (900 MHz to 930 MHz)
  • Internally input matched
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • Industrial applications in the 915 MHz ISM band

Downloads

Datasheet
All application notes
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLF0910H9LS600

Power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 830 900 MHz
PL(1dB) nominal output power at 1 dB gain compression 600 W
Test signal: CW
VDS drain-source voltage 915 MHz [0] 50 V
Gp power gain 915 MHz [0] 19.8 dB
ηD drain efficiency 915 MHz [0] 68.5 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF0910H9LS600 SOT502B
(SOT502B)
sot502b_po Reel 13" Q1/T1 Active Standard Marking BLF0910H9LS600J
(9349 601 21118)
Bulk Pack Active Standard Marking BLF0910H9LS600U
(9349 601 21112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF0910H9LS600 9349 601 21118 BLF0910H9LS600J RFMW Buy Not available
BLF0910H9LS600 9349 601 21112 BLF0910H9LS600U RFMW Buy Request samples
DigiKey Buy

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF0910H9LS600 9349 601 21118 BLF0910H9LS600J RFMW Buy Not available
BLF0910H9LS600 9349 601 21112 BLF0910H9LS600U RFMW Buy Request samples
DigiKey Buy

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