BLM8G0710S-45ABG

BLM8G0710S-45ABG

Download datasheet This product has been discontinued.
Click here for discontinuation information.
This product has been discontinued. Click here for discontinuation information.

LDMOS 2-stage power MMIC

The BLM8G0710S-45AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN8 LDMOS technology. This multiband device is perfectly suited as small cell final stage in Doherty configuration, or as general purpose driver in the 700 MHz to 1000 MHz frequency range. Available in gull wing or straight lead outline.

Features and benefits

  • Designed for broadband operation (frequency 700 MHz to 1000 MHz)
  • High section-to-section isolation enabling multiple combinations
  • High Doherty efficiency thanks to 2 : 1 asymmetry
  • Integrated temperature compensated bias
  • Biasing of individual stages is externally accessible
  • Integrated ESD protection
  • Excellent thermal stability
  • High power gain
  • On-chip matching for ease of use
  • Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)

Applications

  • RF power MMIC for W-CDMA base stations in the 700 MHz to 1000 MHz frequency range. Possible circuit topologies are the following:
    • Asymmetric final stage in Doherty configuration
    • Asymmetric driver for high power Doherty amplifier

Downloads

Datasheet
All application notes
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLM8G0710S-45ABG

LDMOS 2-stage power MMIC

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 700 1000 MHz
PL(3dB) nominal output power at 3 dB gain compression 45 W
Test signal: 1-c W-CDMA, Peaking section
Gp power gain VDS = 28 V; f = 957.5 MHz [0] 33.2 34.7 36.2 dB
Gp power gain VDS = 28 V; f = 730.5 MHz [0] 35.6 dB
RLin input return loss VDS = 28 V; f = 957.5 MHz [0] -17 -10 dB
ηD drain efficiency VDS = 28 V; f = 957.5 MHz [0] 21 26 %
ηD drain efficiency VDS = 28 V; f = 730.5 MHz [0] 23.4 %
ACPR5M adjacent channel power ratio (5 MHz) VDS = 28 V; f = 957.5 MHz [0] -40 -34.5 dB
ACPR5M adjacent channel power ratio (5 MHz) VDS = 28 V; f = 730.5 MHz [0] -39.5 dB
PARO peak-to-average ratio output f = 975.5 MHz [0] 6.7 8 dB
PARO peak-to-average ratio output f = 730.5 MHz [0] 8 dB
Test signal: 1-c W-CDMA, Carrier section
Gp power gain VDS = 28 V; f = 957.5 MHz [0] 33.2 34.7 36.2 dB
Gp power gain VDS = 28 V; f = 730.5 MHz [0] 35.3 dB
RLin input return loss VDS = 28 V; f = 957.5 MHz [0] -19 -10 dB
ηD drain efficiency VDS = 28 V; f = 957.5 MHz [0] 21 26 %
ηD drain efficiency VDS = 28 V; f = 730.5 MHz [0] 23.4 %
ACPR5M adjacent channel power ratio (5 MHz) VDS = 28 V; f = 957.5 MHz [0] -41.5 -36.5 dBc
ACPR5M adjacent channel power ratio (5 MHz) VDS = 28 V; f = 730.5 Hz [0] -38.5 dBc
PARO output peak-to-average ratio f = 957.5 MHz [0] 7.1 8.4 dB
PARO output peak-to-average ratio f = 730.5 MHz [0] 8.1 dB

Package / Packing

All type numbers in the table below are discontinued.

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLM8G0710S-45ABG HSOP16
(SOT1212-2)
sot1212-2_po Reel 13" Q1/T1 in Drypack Discontinued Standard Marking BLM8G0710S-45ABGY
(9340 690 33518)

Discontinuation information

Type number Ordering code (12NC) Last-time buy date Last-time delivery date Replacement product DN Notice Status Comments
BLM8G0710S-45ABG 9340 690 33518 2023-05-31 2024-05-31 202109005DN Full Withdrawal

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 VDS(A1) drain-source voltage of carrier section, driver stage (A1)
2 VGS(A2) gate-source voltage of carrier section, final stage (A2)
3 VGS(A1) gate-source voltage of carrier section, driver stage (A1)
4 RF_IN_A RF input carrier section (A)
5 n.c. not connected
6 n.c. not connected
7 n.c. not connected
8 n.c. not connected
9 n.c. not connected
10 n.c. not connected
11 RF_IN_B RF input peaking section (B)
12 VGS(B1) gate-source voltage of peaking section, driver stage (B1)
13 VGS(B2) gate-source voltage of peaking section, final stage (B2)
14 VDS(B1) drain-source voltage of peaking section, driver stage (B1)
15 RF_OUT_B/VDS(B2) RF output peaking section (B) / drain-source voltage of peaking section, final stage (B2)
16 RF_OUT_A/VDS(A2) RF output carrier section (A) / drain-source voltage of carrier section, final stage (A2)
flange GND RF ground

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLM8G0710S-45ABG 9340 690 33518 BLM8G0710S-45ABGY RFMW Buy Not available
DigiKey Buy

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLM8G0710S-45ABG 9340 690 33518 BLM8G0710S-45ABGY RFMW Buy Not available
DigiKey Buy

Design support