BLF9G38LS-90P
Download datasheetBLF9G38LS-90P
Download datasheetThis device has been transferred from Ampleon to Flip Electronics.
Power LDMOS transistor
90 W LDMOS power transistor for base station applications at frequencies from 3400 MHz to 3600 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent pre-distortability
- Internally matched for ease of use
- Integrated ESD protection
- Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
Applications
- RF power amplifier for LTE base stations and multi carrier applications in the 3400 MHz to 3600 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 3400 | 3600 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 90 | W | |||
| Test signal: 1-c W-CDMA | ||||||
| Gp | power gain | PL(AV) = 20 W [0] | 13.8 | 15 | dB | |
| ηD | drain efficiency | PL(AV) = 20 W [0] | 23 | 28 | % | |
| ACPR | adjacent channel power ratio | PL(AV) = 20 W [0] | -26 | -21 | dBc | |
Package / Packing
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLF9G38LS-90P | CDFM4 (SOT1121B) |
sot1121b_po | Reel 13" Q1/T1 | Transferred | Standard Marking |
BLF9G38LS-90PJ (9340 689 77118) |
|
| Bulk Pack | Transferred | Standard Marking |
BLF9G38LS-90PU (9340 689 77112) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 |
|
|
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and Soldering of RF transistors in Air Cavity Packages | Application note | 2022-09-15 | |
| Packages for RF Power Transistors | Leaflet | 2024-03-25 | |
| LDMOS Ruggedness Reliability | Other type | 2017-03-28 | |
| Efficiency Improvement of LDMOS Transistors for Base Stations: Towards the Theoretical Limit | Other type | 2017-05-02 | |
| LDMOS Technology for RF Power Amplifiers | Other type | 2017-05-03 | |
| RF Power Solutions for Wireless Infrastructure | Brochure | 2024-04-04 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLF9G38LS-90P (Data sheet) | Design support | 2015-06-04 | |
| Model Library for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Model Library Manual for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| Simulation Example for Cadence AWR Microwave Office® | Simulation model | 2023-01-02 | |
| BLF9G38LS-90P Model for ADS (Keysight Advanced Design System) | Simulation model | 2023-06-16 |