Power LDMOS transistor

A 600 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 500 MHz band. This product is an enhanced version of the BLF574 using Ampleon's XR process to provide maximum ruggedness capability in the most severe applications without compromising the RF performance.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (HF to 500 MHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • Industrial, scientific and medical applications
  • Broadcast transmitter applications

Downloads

Datasheet
All application notes
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Design tool

RF Power Lifetime Calculator

Transistor:
BLF574XRS

Power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 500 MHz
PL(1dB) nominal output power at 1 dB gain compression 600 W
Test signal: Pulsed RF
Gp power gain PL = 600 W; VDS = 50 V 24 dB
ηD drain efficiency PL = 600 W; VDS = 50 V; f = 225 MHz; IDq = 100 mA 74.7 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF574XRS SOT1214B
(SOT1214B)
sot1214b_po Bulk Pack Active Standard Marking BLF574XRS,112
(9340 670 87112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLF574XRS BLF574XRS,112 BLF574XRS Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF574XRS 9340 670 87112 BLF574XRS,112 RFMW Buy Request samples
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