UHF power LDMOS transistor

A 200 W LDMOS RF power transistor for broadcast transmitter applications and industrialapplications. The transistor can deliver 200 W in broadband applications from HF to 860 MHz. Theexcellent ruggedness and broadband performance of this device makes it ideal for digitaltransmitter applications.

Features and benefits

  • Integrated ESD protection
  • Excellent ruggedness
  • High power gain
  • High efficiency
  • Excellent reliability
  • Easy power control
  • Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)


  • Transmitter applications in the HF to 860 MHz frequency range
  • Industrial applications in the HF to 860 MHz frequency range
  • Broadcast transmitters


All documentation

All documents

Design tool

RF Power Lifetime Calculator


UHF power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 860 MHz
PL(1dB) nominal output power at 1 dB gain compression 200 W
Test signal: CW
Gp power gain VDS = 50 V 19.6 20.6 dB
ηD drain efficiency VDS = 50 V; f = 705 MHz; IDq = 100 mA 60 63 %
PL(AV) average output power f = 705 MHz; tp = 100 µs; δ = 0.1   196 W

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
sot502b_po Bulk Pack Active Standard Marking BLF882SU
(9340 690 17112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLF882S BLF882SU BLF882S Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF882S 9340 690 17112 BLF882SU RFMW Buy Request samples
DigiKey Buy

Design support

Title Type Date
PCB Design R_10032 Design support 2012-08-16
PCB Design BLF882(S) (Data sheet) Design support 2015-06-01