LDMOS S-band radar power transistor

115 W LDMOS power transistor for S-band radar applications in the frequency range from 3.1 GHz to 3.5 GHz.

Features and benefits

  • High efficiency
  • Excellent ruggedness
  • Excellent thermal stability
  • Easy power control
  • Integrated dual sided ESD protection enables excellent off-state isolation
  • High flexibility with respect to pulse formats
  • Internally matched for broadband matching in 3.1 GHz to 3.5 GHz S-band operation
  • For RoHS compliance see the product details on the Ampleon website

Applications

  • S-band radar applications in the frequency range 3.1 GHz to 3.5 GHz

Downloads

Datasheet
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All documentation

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Design tool

RF Power Lifetime Calculator

Transistor:
BLS9G3135L-115

LDMOS S-band radar power transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 3100 3500 MHz
PL(1dB) nominal output power at 1 dB gain compression 115 W
Test signal: Pulsed RF
VDS drain-source voltage 3.1 to 3.5 GHz [0] 32 V
Gp power gain 3.1 to 3.5 GHz [0] 14 dB
ηD drain efficiency 3.1 to 3.5 GHz [0] 49 %
PL output power 3.1 to 3.5 GHz [0] 115 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLS9G3135L-115 CDFM2
(SOT1135A)
sot1135a_po Bulk Pack Active Standard Marking BLS9G3135L-115U
(9349 602 10112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLS9G3135L-115 BLS9G3135L-115U BLS9G3135L-115 Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLS9G3135L-115 9349 602 10112 BLS9G3135L-115U RFMW Buy Request samples
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Design support

Title Type Date
BLS9G3135LS-115 ADS-2016 Simulation model 2019-07-23
PCB Design BLS9G3135L(S)-115 (Data sheet) Design support 2019-08-08