S-band LDMOS transistor

30 W LDMOS power transistor for S-band radar applications in the frequency range from 2.7 GHz to 3.5 GHz.

Features and benefits

  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (2.7 GHz to 3.5 GHz)
  • Internally matched for ease of use
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • S-band radar applications in the frequency range 2.7 GHz to 3.5 GHz

Downloads

Datasheet
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All documentation

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Design tool

RF Power Lifetime Calculator

Transistor:
BLS6G2735L-30

S-band LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 2700 3500 MHz
PL(1dB) nominal output power at 1 dB gain compression 30 W
Test signal: Pulsed RF
Gp power gain PL = 30 W; VDS = 32 V 11 13 dB
ηD drain efficiency PL = 30 W; VDS = 32 V; 2700 MHz ≤ f ≤ 3500 MHz; IDq = 50 mA 43 50 %
PL output power 30 W
tr rise time PL = 30 W; VDS = 32 V 20 50 ns
tf fall time PL = 30 W; VDS = 32 V 10 50 ns

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLS6G2735L-30 CDFM2
(SOT1135A)
sot1135a_po Bulk Pack Active Standard Marking BLS6G2735L-30,112
(9340 659 71112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLS6G2735L-30 BLS6G2735L-30,112 BLS6G2735L-30 Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLS6G2735L-30 9340 659 71112 BLS6G2735L-30,112 RFMW Buy Request samples
DigiKey Buy

Design support

Title Type Date
PCB Design BLS6G2735L(S)-30 (Data sheet) Design support 2012-09-04
BLS6G2735L-30_ADS-2016 Simulation model 2017-04-19