Power LDMOS transistor

200 W LDMOS power transistor for RF lighting applications at frequencies from 425 MHz to 450 MHz.

The BLC10M6XS200 is designed for high-power CW applications and is assembled in a high performance plastic package.

Features and benefits

  • High efficiency
  • Easy power control
  • Excellent ruggedness
  • Excellent thermal resistance due to copper flange
  • Integrated ESD protection
  • Designed for broadband operation (425 MHz to 450 MHz)
  • Internally input matched
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • RF lighting applications in the 425 MHz to 450 MHz ISM band

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 425 450 MHz
PL(1dB) nominal output power at 1 dB gain compression 200 W
Test signal: CW
VDS drain-source voltage Pout = 200 W; f = 440 MHz [0] 28 V
Gp power gain Pout = 200 W; f = 440 MHz [0] 21 dB
ηD drain efficiency Pout = 200 W; f = 440 MHz [0] 80 %
PL load power Pout = 200 W; f = 440 MHz [0] 200 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLC10M6XS200 SOT1270-1
(SOT1270-1)
sot1270-1_po.pdf Tray, NonBakeable, Multiple in Drypack Active Standard Marking BLC10M6XS200Z
(9349 600 55517)
Reel 13" Q1/T1 in Drypack Active Standard Marking BLC10M6XS200Y
(9349 600 55518)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLC10M6XS200 BLC10M6XS200Z BLC10M6XS200 Always Pb-free 3 3
BLC10M6XS200 BLC10M6XS200Y BLC10M6XS200 Always Pb-free 3 3
Quality and reliability disclaimer

Design support

Title Type Date
BLC10M6XS200_ADS-2016 Simulation model 2017-03-27
PCB Design BLC10M6XS200 (Data-sheet) Design support 2017-08-24