Power LDMOS transistor

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (HF to 600 MHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • Industrial, scientific and medical applications
  • Broadcast transmitter applications

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 600 MHz
PL(1dB) nominal output power at 1 dB gain compression 1400 W
Test signal: pulsed RF
Gp power gain VDS = 50 V; PL = 1400 W 23.2 24.4 dB
RLin input return loss VDS = 50 V; IDq = 40 mA; PL = 1400 W -21 -14 dB
ηD drain efficiency VDS = 50 V; f = 108 MHz; IDq = 40 mA; PL = 1400 W 69 73 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF188XR SOT539A
(SOT539A)
sot539a_po Bulk Pack Active Standard Marking BLF188XRU
(9340 677 53112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLF188XR BLF188XRU BLF188XR Always Pb-free N/A N/A
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF188XR 9340 677 53112 BLF188XRU DigiKey Buy Request samples
RFMW Buy

Documentation



Parametrics

Title Type Date
Parametrics for 0-500 MHz RF power transistors Parametrics 2015-11-24

Design support