Power LDMOS transistor

A 1400 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (HF to 600 MHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • Industrial, scientific and medical applications
  • Broadcast transmitter applications

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 600 MHz
PL(1dB) nominal output power at 1 dB gain compression 1400 W
Test signal: Pulsed RF
Gp power gain VDS = 50 V; PL = 1400 W 23.2 24.4 dB
RLin input return loss VDS = 50 V; IDq = 40 mA; PL = 1400 W -21 -14 dB
ηD drain efficiency VDS = 50 V; f = 108 MHz; IDq = 40 mA; PL = 1400 W 69 73 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF188XR SOT539A
(SOT539A)
sot539a_po Bulk Pack Active Standard Marking BLF188XRU
(9340 677 53112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLF188XR BLF188XRU BLF188XR Always Pb-free N/A N/A
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF188XR 9340 677 53112 BLF188XRU DigiKey Buy Request samples
RFMW Buy

Design support