BLP8G21S-160PV
Download datasheet This product has been discontinued.Click here for discontinuation information.
BLP8G21S-160PV
Download datasheetPower LDMOS transistor
160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to 2025 MHz.
Features and benefits
- Designed for broadband operation (1880 MHz to 2025 MHz)
- Decoupling leads to enable improved video bandwidth
- Excellent ruggedness
- High efficiency
- Excellent thermal stability
- Internally matched for ease of use
- High power gain
- Integrated ESD protection
- Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)
Applications
- RF power amplifiers for base station and multi-carrier applications in the 1880 MHz to 2025 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 1880 | 2025 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 160 | W | |||
| Test signal: 2-c W-CDMA | ||||||
| Gp | power gain | PL(AV) = 20 W; VDS = 28 V | 16.3 | 17.5 | dB | |
| RLin | input return loss | PL(AV) = 20 W; VDS = 28 V; IDq = 600 mA | -10 | -6 | dB | |
| ηD | drain efficiency | PL(AV) = 20 W; VDS = 28 V; 1880 MHz < f < 1920 MHz; IDq = 600 mA | 26 | 31 | % | |
| ACPR | adjacent channel power ratio | PL(AV) = 20 W; VDS = 28 V; 1880 MHz < f < 1920 MHz; IDq = 600 mA | -30 | -25 | dBc | |
Package / Packing
All type numbers in the table below are discontinued.
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLP8G21S-160PV | HSOP6F (SOT1221-2) |
sot1221-2_po | Reel 13" Q1/T1 in Drypack | Discontinued | Standard Marking |
BLP8G21S-160PVY (9340 677 82518) |
Discontinuation information
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | GATE | gate |
|
|
| 2 | GATE | gate | ||
| 3 | DL | decoupling lead | ||
| 4 | DRAIN | drain | ||
| 5 | DRAIN | drain | ||
| 6 | DL | decoupling lead | ||
| 7 | SOURCE | source |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Mounting and soldering of RF transistors in overmolded plastic packages | Application note | 2023-08-14 | |
| Power LDMOS transistor | Data sheet | 2015-12-07 | |
| Mounting and Soldering of RF transistors in Air Cavity Packages | Application note | 2022-09-15 | |
| Packages for RF Power Transistors | Leaflet | 2024-03-25 | |
| LDMOS Ruggedness Reliability | Other type | 2017-03-28 | |
| Efficiency Improvement of LDMOS Transistors for Base Stations: Towards the Theoretical Limit | Other type | 2017-05-02 | |
| LDMOS Technology for RF Power Amplifiers | Other type | 2017-05-03 | |
| RF Power Solutions for Wireless Infrastructure | Brochure | 2024-04-04 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLP8G21S-160PV (Data sheet) | Design support | 2014-05-27 | |
| BLP8G21S-160PV Model for ADS (Keysight Advanced Design System) | Simulation model | 2017-04-19 |