BLD6G21LS-50

Download datasheet This product has been discontinued.
Click here for discontinuation information.
This product has been discontinued. Click here for discontinuation information.

TD-SCDMA 2010 MHz to 2025 MHz fully integrated Doherty transistor

The BLD6G21L-50 and BLD6G21LS-50 incorporate a fully integrated Doherty solution using Ampleon’s state of the art GEN6 LDMOS technology. This device is perfectly suited for TD-SCDMA base station applications at frequencies from 2010 MHz to 2025 MHz. The main and peak device, input splitter and output combiner are integrated in a single package. This package consists of one gate and drain lead and two extra leads of which one is used for biasing the peak amplifier and the other is not connected. It only requires the proper input/output match and bias setting as with a normal class-AB transistor.

Features and benefits

  • Fully optimized integrated Doherty concept
  • Integrated assymetrical power splitter at input
  • Integrated power combiner
  • Peak biasing down to 0 V
  • Low junction temperature
  • High efficiency
  • 100 % peak power tested for guaranteed output power capability
  • Integrated ESD protection
  • Good pair match (main and peak on the same chip)
  • Independent control of main and peak bias
  • Internally matched for ease of use
  • Excellent ruggedness
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • High efficiency RF power amplifiers for TD-SCDMA multicarrier applications.

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 2010 2025 MHz
PL(1dB) nominal output power at 1 dB gain compression 50 W
Test signal: TD-SCDMA
Gp power gain PL(AV) = 8 W; VDS = 28 V [0] 13 14.5 dB
RLin input return loss PL(AV) = 8 W; VDS = 28 V; IDq = 170 mA [0] -23 -8 dB
ηD drain efficiency PL(AV) = 8 W; VDS = 28 V; 2010 MHz ≤ f ≤ 2025 MHz; IDq = 170 mA [0] 39 43 %
PL(AV) average output power VDS = 28 V [0] 8 W
ACPR adjacent channel power ratio PL(AV) = 8 W; VDS = 28 V; 2010 MHz ≤ f ≤ 2025 MHz; IDq = 170 mA [0] -24 -20 dB
PARO output peak-to-average ratio PL(AV) = 8 W [0] 9.4 dB

Package / Packing

All type numbers in the table below are discontinued.

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLD6G21LS-50 CDFM4
(SOT1130B)
sot1130b_po Bulk Pack Discontinued Standard Marking BLD6G21LS-50,112
(9340 635 09112)

Discontinuation information

Type number Ordering code (12NC) Last-time buy date Last-time delivery date Replacement product DN Notice Status Comments
BLD6G21LS-50 9340 635 09112 2016-03-31 2016-06-30 Ampleon-DN_201506035DN Full Withdrawal Replacement: BLM8D1822S-50PB future device

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G+BM gate + bias main
3 S source
4 n.c. no connection
5 BP bias peak

Quality

All type numbers in the table below are discontinued.

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLD6G21LS-50 9340 635 09112 BLD6G21LS-50,112 DigiKey Buy Not available

No documentation available.