LDMOS 2-stage power MMIC

The BLM7G1822S-80AB(G) is a dual section, asymmetric, 2-stage power MMIC using Ampleon’s state of the art GEN7 LDMOS technology. This multiband device is perfectly suited as small cell final stage in Doherty configuration, or as general purpose driver in the 1805 MHz to 2170 MHz frequency range. Available in gull wing or straight lead outline.

Features and benefits

  • Designed for broadband operation (frequency 1805 MHz to 2170 MHz)
  • High section-to-section isolation enabling multiple combinations
  • High Doherty efficiency thanks to 2 : 1 asymmetry
  • Integrated temperature compensated bias
  • Biasing of individual stages is externally accessible
  • Integrated ESD protection
  • Excellent thermal stability
  • High power gain
  • On-chip matching for ease of use
  • Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances (RoHS)


  • RF power MMIC for W-CDMA base stations in the 1805 MHz to 2170 MHz frequency range. Possible circuit topologies are the following:
    • Asymmetric final stage in Doherty configuration
    • Asymmetric driver for high power Doherty amplifier


All application notes
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Design tool

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LDMOS 2-stage power MMIC



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1805 2170 MHz
PL(1dB) nominal output power at 1 dB gain compression 80 W
Test signal: 1-c W-CDMA, Peaking section
Gp power gain PL(AV) = 8 W; VDS = 28 V; f = 2167.5 MHz 26.8 28.3 29.8 dB
RLin input return loss PL(AV) = 8 W; VDS = 28 V; f = 2167.5 MHz; IDq = 80 mA; IDq2 = 240 mA -20 -10 dB
ηD drain efficiency PL(AV) = 8 W; VDS = 28 V; f = 2167.5 MHz 20 24 %
ACPR5M adjacent channel power ratio (5 MHz) PL(AV) = 8 W; VDS = 28 V; f = 2167.5 Hz; IDq = 80 mA; IDq2 = 240 mA -36 -31 dBc
PARo output peak-to-average ratio f = 2167.5 MHz 5.2 7 dB

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
sot1212-1_po Reel 13" Q1/T1 in Drypack Active Standard Marking BLM7G1822S-80ABGY
(9340 687 27518)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 VDS(A1) drain-source voltage of carrier section, driver stage (A1)
2 VGS(A2) gate-source voltage of carrier section, final stage (A2)
3 VGS(A1) gate-source voltage of carrier section, driver stage (A1)
4 RF_IN_A RF input carrier section (A)
5 n.c. not connected
6 n.c. not connected
7 n.c. not connected
8 n.c. not connected
9 n.c. not connected
10 n.c. not connected
11 RF_IN_B RF input peaking section (B)
12 VGS(B1) gate-source voltage of peaking section, driver stage (B1)
13 VGS(B2) gate-source voltage of peaking section, final stage (B2)
14 VDS(B1) drain-source voltage of peaking section, driver stage (B1)
15 RF_OUT_B/VDS(B2) RF output peaking section (B) / drain-source voltage of peaking section, final stage (B2)
16 RF_OUT_A/VDS(A2) RF output carrier section (A) / drain-source voltage of carrier section, final stage (A2)
flange GND RF ground


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLM7G1822S-80ABG BLM7G1822S-80ABGY BLM7G1822S-80ABG 3 3
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLM7G1822S-80ABG 9340 687 27518 BLM7G1822S-80ABGY RFMW Buy Request samples
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Design support

Title Type Date
PCB Design BLM7G1822S-80AB(G) (Data sheet) Design support 2014-12-01