BLC9H10XS-600A
Download datasheetBLC9H10XS-600A
Download datasheetPower LDMOS transistor
600 W LDMOS packaged asymmetric Doherty power transistor for base station applications at frequencies from 616 MHz to 960 MHz.
Features and benefits
- Excellent ruggedness
- High efficiency
- Low thermal resistance providing excellent thermal stability
- Lower output capacitance for improved performance in Doherty applications
- Designed for low memory effects providing excellent digital pre-distortion capability
- Internally matched for ease of use
- Integrated ESD protection
- For RoHS compliance see the product details on the Ampleon website
Applications
- RF power amplifiers for base stations and multi carrier applications in the 616 MHz to 960 MHz frequency range
Parametrics
| Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
|---|---|---|---|---|---|---|
| frange | frequency range | 616 | 960 | MHz | ||
| PL(3dB) | nominal output power at 3 dB gain compression | 600 | W | |||
| Test signal: 1-c W-CDMA @ 925 to 960 MHz | ||||||
| VDS | drain-source voltage | 925 to 960 MHz [0] | 48 | V | ||
| Gp | power gain | 925 to 960 MHz [0] | 17.7 | dB | ||
| ηD | drain efficiency | 925 to 960 MHz [0] | 53.9 | % | ||
| PL(AV) | average output power | 925 to 960 MHz [0] | 50.5 | dBm | ||
| ACPR | adjacent channel power ratio | 925 to 960 MHz [0] | -31.4 [1] | dBc | ||
| Test signal: 1-c W-CDMA @ 869 to 894 MHz | ||||||
| VDS | drain-source voltage | 869 to 894 MHz [2] | 50 | V | ||
| Gp | power gain | 869 to 894 MHz [2] | 18.3 | dB | ||
| ηD | drain efficiency | 869 to 894 MHz [2] | 52.7 | % | ||
| PL(AV) | average output power | 869 to 894 MHz [2] | 50.5 | dBm | ||
| ACPR | adjacent channel power ratio | 869 to 894 MHz [2] | -30.8 [3] | dBc | ||
| Test signal: 1-c W-CDMA @ 758 to 803 MHz | ||||||
| VDS | drain-source voltage | 758 to 803 MHz [4] | 47 | V | ||
| Gp | power gain | 758 to 803 MHz [4] | 17.7 | dB | ||
| ηD | drain efficiency | 758 to 803 MHz [4] | 54.2 | % | ||
| PL(AV) | average output power | 758 to 803 MHz [4] | 50.5 | dBm | ||
| ACPR | adjacent channel power ratio | 758 to 803 MHz [4] | -33.8 [5] | dBc | ||
| Test signal: 1-c W-CDMA @ 729 to 768 MHz | ||||||
| VDS | drain-source voltage | 729 to 768 MHz [6] | 48 | V | ||
| Gp | power gain | 729 to 768 MHz [6] | 17.5 | dB | ||
| ηD | drain efficiency | 729 to 768 MHz [6] | 57.2 | % | ||
| PL(AV) | average output power | 729 to 768 MHz [6] | 50.5 | dBm | ||
| ACPR | adjacent channel power ratio | 729 to 768 MHz [6] | -30.8 [7] | dBc | ||
Package / Packing
| Type number | Package | Outline version | Reflow-/Wave soldering |
Packing | Product status | Marking |
Orderable part number, (Ordering code (12NC)) |
|---|---|---|---|---|---|---|---|
| BLC9H10XS-600A | DFM4 (SOT1250-2) |
sot1250-2_po | Tray, NonBakeable, Multiple in Drypack | Active | Standard Marking |
BLC9H10XS-600AZ (9349 601 05517) |
|
| Reel 13" Q1/T1 in Drypack | Active | Standard Marking |
BLC9H10XS-600AY (9349 601 05518) |
Pinning info
| Pin | Symbol | Description | Simplified outline | Graphic symbol |
|---|---|---|---|---|
| 1 | D1 | drain1 |
|
|
| 2 | D2 | drain2 | ||
| 3 | G1 | gate1 | ||
| 4 | G2 | gate2 | ||
| 5 | S | source |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| BLC9H10XS-600A | 9349 601 05517 | BLC9H10XS-600AZ | DigiKey | Buy | Request samples |
| RFMW | Buy | ||||
| BLC9H10XS-600A | 9349 601 05518 | BLC9H10XS-600AY | RFMW | Buy | Not available |
Ordering & availability
| Type number | Ordering code (12NC) | Orderable part number | Distributor | Buy online | Samples |
|---|---|---|---|---|---|
| BLC9H10XS-600A | 9349 601 05517 | BLC9H10XS-600AZ | DigiKey | Buy | Request samples |
| RFMW | Buy | ||||
| BLC9H10XS-600A | 9349 601 05518 | BLC9H10XS-600AY | RFMW | Buy | Not available |
Documentation
| Title | Type | Date | |
|---|---|---|---|
| Power LDMOS transistor | Data sheet | 2018-08-10 | |
| Biasing Asymmetrical Doherty RF Power Transistor | Other type | 2016-08-31 | |
| Mounting and Soldering of RF transistors in Air Cavity Packages | Application note | 2022-09-15 | |
| Packages for RF Power Transistors | Leaflet | 2024-03-25 | |
| LDMOS Ruggedness Reliability | Other type | 2017-03-28 | |
| Efficiency Improvement of LDMOS Transistors for Base Stations: Towards the Theoretical Limit | Other type | 2017-05-02 | |
| LDMOS Technology for RF Power Amplifiers | Other type | 2017-05-03 | |
| RF Power Solutions for Wireless Infrastructure | Brochure | 2024-04-04 |
Design support
| Title | Type | Date | |
|---|---|---|---|
| Printed-Circuit Board (PCB) BLC9H10XS-600A (Data sheet) | Design support | 2018-08-21 | |
| BLC9H10XS-600A Model for ADS (Keysight Advanced Design System) | Simulation model | 2022-09-21 |