HF / VHF power LDMOS transistor

A 300 W LDMOS RF power transistor for broadcast applications and industrial, scientific and medical applications in the HF to 500 MHz band.

Features and benefits

  • Easy power control
  • Integrated ESD protection
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (HF and VHF band)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • Industrial, scientific and medical applications
  • Broadcast transmitter applications

Downloads

Datasheet
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Design tool

RF Power Lifetime Calculator

Transistor:
BLF573S

HF / VHF power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 500 MHz
PL(1dB) nominal output power at 1 dB gain compression 300 W
Test signal: CW
Gp power gain PL = 300 W; VDS = 50 V 26 27.2 28.4 dB
RLin input return loss PL = 300 W; VDS = 50 V; IDq = 900 mA -13 -10 dB
ηD drain efficiency PL = 300 W; VDS = 50 V; f = 225 MHz; IDq = 900 mA 67 70 %
PL output power 300 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF573S SOT502B
(SOT502B)
sot502b_po Bulk Pack Active Standard Marking BLF573S,112
(9340 621 75112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S souce

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLF573S BLF573S,112 BLF573S Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF573S 9340 621 75112 BLF573S,112 RFMW Buy Request samples
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