This device has been transferred from Ampleon to Rochester Electronics.

UHF power MOS transistor

N-channel enhancement mode vertical D-MOS power transistor encapsulated in a 6-lead, SOT171A flange package with a ceramic cap. All leads are isolated from the flange.

Features and benefits

  • High power gain
  • Easy power control
  • Gold metallization
  • Good thermal stability
  • Designed for broadband operation.
  • Withstands full load mismatch

Applications

  • Large signal amplifier applications in the UHF frequency range

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 100 500 MHz
PL(1dB) nominal output power at 1 dB gain compression 5 W
Test signal: CW
Gp power gain PL = 5 W; VDS = 28 V 13 16.5 dB
ηD drain efficiency VDS = 28 V; f = 500 MHz; IDq = 50 mA 50 59 %
PL output power 5 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF542 CDFM6
(SOT171A)
sot171a_po Bulk Pack Transferred Standard Marking BLF542,112
(9340 066 60112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 S source
2 S source
3 G gate
4 D drain
5 S source
6 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF542 9340 066 60112 BLF542,112 Rochester Electronics Buy Not available

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF542 9340 066 60112 BLF542,112 Rochester Electronics Buy Not available

Design support

Title Type Date
BLF542 14V 10mA S-parameter Data S-parameter 2012-06-08
BLF542 14V 50mA S-parameter Data S-parameter 2012-06-08
BLF542 28V 10mA S-parameter Data S-parameter 2012-06-08
BLF542 28V 50mA S-parameter Data S-parameter 2012-06-08