Broadband power LDMOS transistor

A 200 W LDMOS RF power transistor for broadcast transmitter and industrial applications. The transistor is suitable for the frequency range HF to 1500 MHz. The excellent ruggedness and broadband performance of this device makes it ideal for digital applications.

Features and benefits

  • Integrated ESD protection
  • Excellent ruggedness
  • High power gain
  • High efficiency
  • Excellent reliability
  • Easy power control
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • Communication transmitter applications in the HF to 1500 MHz frequency range
  • Industrial applications in the HF to 1500 MHz frequency range

Downloads

Datasheet
All models
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLF647P

Broadband power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 1500 MHz
PL(1dB) nominal output power at 1 dB gain compression 200 W
Test signal: Pulsed RF
Gp power gain VDS = 32 V 18 dB
ηD drain efficiency VDS = 32 V; f = 1300 MHz; IDq = 0.1 A 70 %
PL(M) peak output power 200 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF647P CDFM4
(SOT1121A)
sot1121a_po Bulk Pack Active Standard Marking BLF647P,112
(9340 668 56112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLF647P BLF647P,112 BLF647P Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF647P 9340 668 56112 BLF647P,112 RFMW Buy Request samples
DigiKey Buy

Design support