Power LDMOS transistor

A 1900 W extremely rugged LDMOS power transistor for industrial pulsed applications in the HF to 150 MHz band.

Features and benefits

  • Easy power control
  • Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
  • Excellent ruggedness VSWR > 65 : 1
  • High efficiency
  • Excellent thermal stability
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)


  • Industrial, scientific and medical applications


All models
All documentation

All documents

Design tool

RF Power Lifetime Calculator


Power LDMOS transistor



Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1 150 MHz
PL(1dB) nominal output power at 1 dB gain compression 1900 W
Test signal: Pulsed RF
VDS drain-source voltage 108 MHz 50 V
Gp power gain 108 MHz 26 dB
ηD drain efficiency 108 MHz 72.5 %

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
sot539a_po Bulk Pack Active Standard Marking BLF189XRBU
(9349 600 81112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D1 drain1
2 D2 drain2
3 G1 gate1
4 G2 gate2
5 S source


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLF189XRB BLF189XRBU BLF189XRB Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLF189XRB 9349 600 81112 BLF189XRBU DigiKey Buy Request samples

Design support

Title Type Date
PCB Design BLF189XRB(S) (Data sheet) Design support 2017-10-06
BLF189XRB ADS-2016 Simulation model 2018-11-28