Power LDMOS transistor

A 120 W LDMOS power transistor for broadcast and industrial applications in the HF to 1000 MHz band

Features and benefits

  • Easy power control
  • Integrated dual sided ESD protection enables class C operation and complete switch off of the transistor
  • Excellent ruggedness
  • High efficiency
  • Excellent thermal stability
  • Designed for broadband operation (HF to 1000 MHz)
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • Industrial, scientific and medical applications
  • Broadcast transmitter application

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 10 1000 MHz
PL(1dB) nominal output power at 1 dB gain compression 120 W
Test signal: Pulsed RF
VDS drain-source voltage 720 MHz 50 V
Gp power gain 720 MHz 18 dB
ηD drain efficiency 720 MHz 72 %
PL load power 720 MHz 120 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLP10H6120P HSOP4F
(SOT1223-2)
sot1223-2_po Reel 13" Q1/T1 in Drypack Active Standard Marking BLP10H6120PY
(9349 600 06518)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 G2 gate 2
2 G1 gate1
3 D1 drain1
4 D2 drain2
5 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLP10H6120P 9349 600 06518 BLP10H6120PY RFMW Buy Not available
DigiKey Buy

Design support

Title Type Date
BLP10H6120P ADS-2016 Simulation model 2017-03-29
PCB Design BLP10H6120P(G) (Data sheet) Design support 2018-08-20