LDMOS S-band radar power transistor

Single ended 400 W LDMOS power transistor for S-band radar applications in the frequency range from 2.9 GHz to 3.4 GHz

Features and benefits

  • Single ended
  • Small size
  • High efficiency
  • Excellent ruggedness
  • Designed for S-band operation
  • Excellent thermal stability
  • Easy power control
  • Integrated dual sided ESD protection enables excellent off-state isolation
  • High flexibility with respect to pulse formats
  • Internally matched for ease of use
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • S-band radar applications in the frequent range 2.9 GHz to 3.4 GHz

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 2900 3400 MHz
PL(1dB) nominal output power at 1 dB gain compression 400 W
Test signal: Pulsed RF
VDS drain-source voltage 2.9-3.4 GHz [0] 32 V
Gp power gain 2.9-3.4 GHz [0] 12 dB
ηD drain efficiency 2.9-3.4 GHz [0] 43 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLS9G2934L-400 SOT502A
(SOT502A)
sot502a_po Bulk Pack Active Standard Marking BLS9G2934L-400U
(9340 692 95112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLS9G2934L-400 9340 692 95112 BLS9G2934L-400U DigiKey Buy Request samples
RFMW Buy

Design support