Power LDMOS transistor

105 W LDMOS power transistor for S-band radar applications at frequencies from 2300 MHz to 2500 MHz

Features and benefits

  • Excellent ruggedness
  • Integrated ESD protection
  • High efficiency
  • Low Rth providing excellent thermal stability
  • Internally matched for ease of use
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

Applications

  • RF power amplifiers for S-band radar applications (2300 MHz to 2500 MHz)

Downloads

Datasheet
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLS7G2325L-105

Power LDMOS transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 2300 2500 MHz
PL(1dB) nominal output power at 1 dB gain compression 105 W
Test signal: Pulsed RF
Gp power gain VDS = 30 V 16.5 dB
ηD drain efficiency VDS = 30 V; 2300 MHz ≤ f ≤ 2500 MHz; IDq = 900 mA 55 %
PL(AV) average output power 110 W

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLS7G2325L-105 SOT502A
(SOT502A)
sot502a_po Bulk Pack Active Standard Marking BLS7G2325L-105,112
(9340 653 24112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
BLS7G2325L-105 BLS7G2325L-105,112 BLS7G2325L-105 Always Pb-free 1 1
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLS7G2325L-105 9340 653 24112 BLS7G2325L-105,112 RFMW Buy Request samples
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No documentation available.