LDMOS L-band radar power transistor

600 W LDMOS power transistor for L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz

Features and benefits

  • High efficiency
  • Excellent ruggedness
  • Designed for L-band operation
  • Excellent thermal stability
  • Easy power control
  • Integrated dual sided ESD protection enables excellent off-state isolation
  • High flexibility with respect to pulse formats
  • Internally matched for ease of use
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz

Downloads

Datasheet
All application notes
All documentation

All documents

Design tool

RF Power Lifetime Calculator

Transistor:
BLL9G1214LS-600

LDMOS L-band radar power transistor

°C

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1200 1400 MHz
PL(3dB) nominal output power at 3 dB gain compression 600 W
Test signal: Pulsed RF
VDS drain-source voltage 1.2 to 1.4 GHz [0] 32 V
Gp power gain 1.2 to 1.4 GHz [0] 19 dB
ηD drain efficiency 1.2 to 1.4 GHz [0] 60 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLL9G1214LS-600 SOT502B
(SOT502B)
sot502b_po Bulk Pack Active Standard Marking BLL9G1214LS-600U
(9349 600 32112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLL9G1214LS-600 9349 600 32112 BLL9G1214LS-600U RFMW Buy Request samples
DigiKey Buy

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLL9G1214LS-600 9349 600 32112 BLL9G1214LS-600U RFMW Buy Request samples
DigiKey Buy

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