LDMOS L-band radar power transistor

600 W LDMOS power transistor for L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz

Features and benefits

  • High efficiency
  • Excellent ruggedness
  • Designed for L-band operation
  • Excellent thermal stability
  • Easy power control
  • Integrated dual sided ESD protection enables excellent off-state isolation
  • High flexibility with respect to pulse formats
  • Internally matched for ease of use
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)

Applications

  • L-band radar applications in the frequency range from 1.2 GHz to 1.4 GHz

Parametrics

Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 1200 1400 MHz
PL(3dB) nominal output power at 3 dB gain compression 600 W
Test signal: Pulsed RF
VDS drain-source voltage 1.2 to 1.4 GHz [0] 32 V
Gp power gain 1.2 to 1.4 GHz [0] 19 dB
ηD drain efficiency 1.2 to 1.4 GHz [0] 60 %

Package / Packing

Type number Package Outline version Reflow-/Wave
soldering
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLL9G1214L-600 SOT502A
(SOT502A)
sot502a_po Bulk Pack Active Standard Marking BLL9G1214L-600U
(9349 600 33112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source

Quality

Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
Quality and reliability disclaimer

Ordering & availability

Type number Ordering code (12NC) Orderable part number Distributor Buy online Samples
BLL9G1214L-600 9349 600 33112 BLL9G1214L-600U RFMW Buy Request samples

Design support

Title Type Date
PCB_Design BLL9G1214L(S)-600 (Data sheet) Design support 2017-11-23
BLL9G1214LS-600 ADS-2016 Simulation model 2018-11-16