We take GaN mainstream
Thanks to our 30 year legacy in RF power products, we are the only GaN supplier to bring you excellence in product reliability and cost coupled with a high degree of supply chain confidence.
Our GaN technology features best-in-class linearity while allowing designers to maintain power, ruggedness and efficiency. This enables you to create uncompromising amplifier designs that can reduce component count and reduce amplifier footprint.
A breakthrough technology
Simply put, GaN offers a step increase in efficiency and power density performance over Si LDMOS in most applications. This can be quantified in the Johnson’s Figure of Merit (FoM) – a combination of significant RF performance variables that has a baseline for Si at 1 and leads to a FoM for GaN of 324. To put this into context, GaAs, another commonly used compound material in RF, has a FoM of 1.44. Suffice to say, GaN represents a breakthrough technology.
Biasing made easy
GaN products are termed high-electron mobility transistors (HEMTs), a name that captures one of the intrinsic benefits of GaN: the high electron drift velocity. As depletion-mode devices, they are normally on without needing to apply a gate bias. A negative gate bias is needed to switch the transistors off. While biasing is not straightforward, we offer you solutions not just components. So we already have a tried and tested bias circuit available, and provide continuous application support throughout the product’s life.
Another advantage of GaN is its very hard structure capable of withstanding very high temperatures. Specified to 250 °C maximum, GaN compares favourably to the 225 °C for Si LDMOS. With such high temperatures, packages must also be capable of exploiting this feature.
Featured products View all products
Key features and benefits
- High frequencies, with bandwidth up to 6 GHz
- High efficiencies, power density and thermal conductivity
- Operates at high temperatures without loss of reliability (250 °C compared to 225 °C for Si LDMOS)
- Excellent ruggedness and linearity
- ITAR free source of GaN
Key applications View all applications
- Radar systems
- Test & Measurement equipment
- Broadband and P2P communication
|Type number||Description||Status||Quick access|
|CLF1G0060-30||Broadband RF power GaN HEMT||Production||Download datasheet|
|CLF1G0060-10||Broadband RF power GaN HEMT||Production||Download datasheet|
|CLF1G0060S-10||Broadband RF power GaN HEMT||Production||Download datasheet|
|CLF1G0060S-30||Broadband RF power GaN HEMT||Production||Download datasheet|
|CLF1G0035-100P||Broadband RF power GaN HEMT||Production||Download datasheet|
|CLF1G0035S-100P||Broadband RF power GaN HEMT||Production||Download datasheet|
|CLF1G0035-100||Broadband RF power GaN HEMT||Production||Download datasheet|
|CLF1G0035-50||Broadband RF power GaN HEMT||Production||Download datasheet|
|CLF1G0035S-50||Broadband RF power GaN HEMT||Production||Download datasheet|
|CLF1G0035S-100||Broadband RF power GaN HEMT||Production||Download datasheet|
|CLF1G0035S-200P||Broadband RF power GaN HEMT||Production||Download datasheet|
|CLF1G0035-200P||Broadband RF power GaN HEMT||Production||Download datasheet|
|Mounting and Soldering of RF transistors||Application note||2016-02-16|
|Packages for RF Power Transistors||Leaflet||2016-08-01|
|RF Power Solutions for Broadcast, ISM, A&D and RF Energy||Brochure||2019-03-28|
|S-band Radar LDMOS Transistors||Other type||2017-05-01|
|LDMOS Ruggedness Reliability||Other type||2017-03-27|