Power LDMOS transistor

A 600 W LDMOS power transistor for industrial applications at frequency of 915 MHz.

The BLF0910H9LS600 is designed for high-power CW applications and is assembled in a high performance ceramic package.

Features and benefits

  • High efficiency
  • Easy power control
  • Excellent ruggedness
  • Integrated ESD protection
  •  Designed for broadband operation (900 MHz to 930 MHz)
  • Internally input matched
  • Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS)


  • Industrial applications in the 915 MHz ISM band


Symbol Parameter Conditions Min Typ/Nom Max Unit
frange frequency range 830 900 MHz
PL(1dB) nominal output power at 1 dB gain compression 600 W
Test signal: CW
VDS drain-source voltage 915 MHz [0] 50 V
Gp power gain 915 MHz [0] 19.8 dB
ηD drain efficiency 915 MHz [0] 68.5 %

Package / Packing

Type number Package Outline version Reflow-/Wave
Packing Product status Marking Orderable part number,
(Ordering code (12NC))
BLF0910H9LS600 SOT502B
sot502b_po Reel 13" Q1/T1 Active Standard Marking BLF0910H9LS600J
(9349 601 21118)
Bulk Pack Active Standard Marking BLF0910H9LS600U
(9349 601 21112)

Pinning info

Pin Symbol Description Simplified outline Graphic symbol
1 D drain
2 G gate
3 S source


Type number Orderable part number Chemical content RoHS / RHF Leadfree conversion date MSL MSL LF
Quality and reliability disclaimer