Delivering enhanced RF performance with unparalleled linearity and power gain, our LDMOS 3400 – 3800 MHz devices also offer you the highest levels of system efficiency. Requiring less energy to power the network infrastructure, operators can now deliver next-generation cellular services and connectivity to consumers for less operational expenditure.

To help you design-in and integrate our solutions in the shortest time possible, we offer various design and simulation information. It includes layout files, best-in-class large signal models, loadpull and S-parameters data.

Key features and benefits

  • Highest efficiency
  • Best ruggedness
  • Best product consistency
  • Advanced 2- and 3-way Doherty amplifier designs
  • Highest power, single-ended and push-pull devices

Key applications View all applications

  • Cellular base stations – MC-GSM, GSM- EDGE, (TD-S)CDMA, W-CDMA / UMTS, LTE
  • WiMAX base stations
Type number Description Status Quick access
BLF6G38-10G WiMAX power LDMOS transistor Production Download datasheet
BLF6G38LS-50 WiMAX power LDMOS transistor Production Download datasheet
BLF6G38S-25 WiMAX power LDMOS transistor Production Download datasheet
BLF8G38LS-75V Power LDMOS transistor Production Download datasheet
BLF9G38LS-90P Power LDMOS transistor Production Download datasheet